Spatial retardation of carrier heating in scaled 0.1-μm n-MOSFET's using Monte Carlo simulations

R. B. Hulfachor,J. J. Ellis-Monaghan,K. W. Kim,M. A. Littlejohn

IEEE Transactions on Electron Devices（1996）

引用 5|浏览4

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摘要

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 /spl mu/m n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V/sub d/ considerably less than the Si/SiO/sub 2/ injection barrier height /spl phi//sub b/. Si...

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关键词

Degradation,MOSFET circuits,Interface states,Monte Carlo methods,Stress,Secondary generated hot electron injection,Voltage,Resistance heating,Scattering,Doping

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