Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures

Matthew J. Gadlage,Jonathan R. Ahlbin,Balaji Narasimham,Vishwanath Ramachandran,C. A. Dinkins,N. D. Pate,Bharat L. Bhuva,Ronald D. Schrimpf,Lloyd W. Massengill,Robert Shuler,Dale McMorrow

IEEE Transactions on Device and Materials Reliability（2010）

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摘要

Combinational-logic soft errors are expected to be the dominant reliability issue for advanced technologies. One of the major factors affecting the soft-error rates is single-event transient (SET) pulsewidths. The SET pulsewidths, which are controlled by drift, diffusion, and parasitic bipolar-transistor parameters, are a strong function of operating temperature. In this paper, heavy-ion induced S...

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关键词

CMOS technology,Temperature,Pulse measurements,Pulse circuits,Inverters,Circuit testing,Integrated circuit measurements,Space vector pulse width modulation,Integrated circuit technology,Bipolar transistors

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