An improved formula for the determination of the polysilicon doping

A. S. Spinelli,A. Pacelli, A. L. Lacaita

IEEE Electron Device Letters（2001）

引用 10|浏览7

暂无评分

摘要

This letter describes an improved formula for the extraction of the polysilicon doping from the C-V characteristic of MOS transistors. Analytical approximations are presented for the inversion layer contribution, which was neglected in previous works. The new approach returns an estimate error smaller than 10% when full substrate and poly quantization are accounted for. Practical application to experimental data is also addressed.

查看译文

关键词

MOS capacitors,MOSFET,capacitance,doping profiles,elemental semiconductors,inversion layers,silicon,C-V characteristic,MOS capacitor,MOS transistors,Si-SiO/sub 2/,analytical approximations,estimate error,improved formula,inversion layer capacitance,poly quantization,polysilicon doping

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要