Self-assembled Ge quantum dots on Si and their applications

Ge quantum dots have been grown on Si by self-assembling in the Stranski–Krastanov growth mode using molecular beam epitaxy. The topics to be addressed are size uniformity control and exact placement of dots. Possible device application discussions show that Ge quantum dots may be used for mid-infrared photodetectors, lasers, resonant tunneling diodes, thermoelectric cooler, cellular automata, and quantum computer, etc.