SiC(111) growth by C60 decomposition on Si(111) studied by electron spectroscopies

We have grown an ordered SiC(111) film, characterized by a (1×1) low energy electron diffraction (LEED) pattern, by evaporating C60 molecules on a Si(111) substrate kept at 1200 K in ultrahigh vacuum conditions. In situ inverse photoemission spectra show the presence of a state at the conduction band minimum attributed to C–Si bond, whose intensity has been found to be related to the morphology of the grown film.