High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz f/sub T/

IEEE Electron Device Letters(1997)

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摘要
We report room-temperature 0.07-μm CMOS inverter delays of 13.6 ps at 1.5 V and 9.5 ps at 2.5 V for an SOI substrate; 16 ps at 1.5 V and 12 ps at 2.5 V for a bulk substrate. This is the first room-temperature sub-10 ps inverter ring oscillator delay ever reported. PFETs with very high drive current and reduction in parasitic resistances and capacitances for both NFETs and PFETs, realized by carefu...
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关键词
Delay,Inverters,MOSFET circuits,Ring oscillators,Parasitic capacitance,Thermal resistance,Cutoff frequency,CMOS digital integrated circuits,Digital circuits,Radio frequency
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