Dopant-free FUSI Pt/sub x/Si metal gate for high work function and reduced Fermi-level pinning

IEEE Electron Device Letters（2005）

引用 7|浏览5

暂无评分

摘要

High work function (4.9 eV) on high-/spl kappa/ gate dielectric, which is suitable for bulk p-MOSFET, has been achieved using fully silicided (FUSI) Pt/sub x/Si gate without boron predoping of polysilicon. High concentration of Pt in FUSI Pt/sub x/Si using Ti capping layer on Pt in the FUSI process is a key to achieving high work function and reduced Fermi-level pinning on high-/spl kappa/ dielect...

查看译文

关键词

MOSFET circuits,Boron,Dielectric substrates,Annealing,Dielectric devices,Silicides,Doping,CMOSFETs,Leakage current,Nitrogen

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要