Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- $k$ Dielectric MOSFETs

Understanding and minimization of low-frequency noise (LFN) originating from high- k (HK) gate dielectrics in new generation MOSFETs are of critical importance to applications in RF, analog, and digital circuits. To understand the effect of stress conditions on noise, nMOSFETs were subjected to accelerated hot-carrier stress (HCS) and positive constant-voltage stress (CVS). The additional LFN intr...