Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process

D. C. Laney,L. E. Larson, Chan, P.,Malinowski, J.,D. Harame,S. Subbanna,R. Volant, M. Case

Microwave Theory and Techniques, IEEE Transactions（2001）

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摘要

Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 Ω, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 dB and a measured coupling coefficient (k) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed

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关键词

Q-factor,elemental semiconductors,heterojunction bipolar transistors,high-frequency transformers,high-frequency transmission lines,inductors,microwave bipolar transistors,semiconductor materials,silicon,silicon compounds,-5 dB,10 GHz,5.5 to 12.5 GHz,Q-factor,Si-SiGe,Si/SiGe heterojunction bipolar transistor,characteristic impedance,coupling coefficient,gain,insertion loss,lateral transformer,metallization,microwave inductor,microwave transformer,microwave transmission line,planar inductor,polyimide dielectric

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