LPE growth of GaAs-GaAlAs superlattices

A novel vertical rotation LPE system and a new technique are described. The formation of multilayers and superlattice (SL) structures have been demonstrated with this technique. The special graphite casette and the regulation system have made preparation of these structures possible. In the GaAs-GaAlAs system multilayer structure up to the layer number of 50–100 with a periodicity of d < 50 nm were grown.