High-Power Algan/Gan Dual-Gate High Electron Mobility Transistor Mixers On Sic Substrates

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 x 300 mum gate device achieved the maximum output power of 19.6 dBm and upconversion gain of I I dB at 2 GHz and 13 dBm, and 5 dB at 5 GHz.