A Study of Cold Dopant Sources for Gas Source MBE: The use of Disilane as an N-Type Dopant of AlxGa1-xAs (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS（1990）
关键词
gaas,doping,hbt,carbon,flow rate
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