Optical properties of as grown and ion implanted (Ar+,N2+,α) GaAs nipi doping superlattices

A brief review of the optical properties of GaAs nipi doping superlattices (DSLs) subjected to N-2(+), Ar+ ions, and alpha particle bombardment is given. Several experimental techniques, such as low temperature CW and time resolved photoluminescence (CW and TR-LTPL) as well as Raman spectroscopy (RS) and spectroscopic ellipsometry (SE) have been used to detect new optically active bands. An attempt is made to explain the origin of these new bands. (C) 2000 Elsevier Science B.V. All rights reserved.