A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells

IEEE Journal of Selected Topics in Quantum Electronics(1998)

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摘要
The fabrication of quantum-wire structures using vacancy enhanced interdiffusion of quantum wells is analyzed theoretically. A phenomenological equation is used to describe the effects of strain on vacancy diffusion. The quantum-wire confinement potentials are studied as a function of the trench opening widths and the separation distances from the SiO/sub 2/-AlGaAs interface. The lateral confineme...
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关键词
Quantum mechanics,Fabrication,Capacitive sensors,Equations,Strain control,Carrier confinement,Optoelectronic devices,Photonics,Microelectronics,Potential well
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