Room Temperature Passivation of the Silicon Surface by Chemisorption of an Organic Monolayer

1997.

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Abstract:

bond has about 51 % ionicity, while Si-N bond 30 %, the Si-C bond 12 %, and the Si-H bond 2 %.) Higher ionicity of the Si-O bond results in the inevitable point defects. (3) The quality of the interface and the monolayer itself was found to be strongly dependent on the doping type, indicating that the silicon surface potential, and theref...More

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