A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

Kelvin S. Yuk,George R. Branner,David J. McQuate

IEEE Transactions on Microwave Theory and Techniques（2009）

引用 116|浏览3

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摘要

A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids) formulation with self-heating and charge- trapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance (gm) for high Ids over a large range of biases. A method of systematically employing dynamic IV behavior...

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关键词

Wideband,Gallium nitride,HEMTs,MODFETs,Intrusion detection,Aluminum gallium nitride,Equations,Transconductance,Predictive models,Intermodulation distortion

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