High performance antimony-rich RexSb3Te for phase-change random access memory applications

Phase-change random access memory (PCRAM) demands for high-performance phase change materials, including operation speed, data retention, resistance drift etc. In this work, a high performance PCRAM device based on antimony-rich RexSb3Te material was put forward and studied. Excellent data retention, fast operation speed, low resistance drift, low power consumption and good cycle characteristics were achieved. The lattice information, bonding properties and surface morphology of the films were characterized by transmission electron microscopy, Raman spectroscopy and atomic force microscopy. Density functional theory calculations show that the Re dopant is more inclined to replace Sb and forms chemical bonds with Te, and the Re-Te bonds are more stable than the previous Sb-Te bonds, which is conducive to the formation of stable precursors to accelerate nucleation. The research shows that the antimony-rich Re0.18Sb3Te material has good overall performance, which provides a strategy for developing high-performance memory.