Atomic nitrogen doping in p-ZnSe with high activation ratio using a high-power plasma source

The p-type doping in ZnSe molecular-beam epitaxial growth was studied using a high-power plasma source. The effect of growth conditions on p-ZnSe : N was investigated. An activation ratio of almost 100% with net acceptor concentration (NA–ND) of around 1 × 1018 cm−3 was reproducibly achieved. The 4.2 K PL spectrum of p-ZnSe : N with high NA—ND (∼ 1 × 1018 cm−3) shows high crystal quality.