Photoluminescence Characterization Of Cubic Cds Epilayers

Cubic CdS epilayers were grown on (100) GaAs substrates by hot-wall epitaxy and their photoluminescence (PL) characteristics were studied. A heavy hole free exciton peak was observed even at room temperature and a light hole free exciton peak was observed at 30 - 100 K. The temperature dependence of the free excitonic emission intensity was demonstrated using a two-step quenching mechanism. The excitation power dependence showed that the PL peak at 2.367 eV is due to the free-to-bound transition. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.