One-step lateral growth for reduction in defect density ofa -plane GaN onr -sapphire substrate and its application in light emitters

Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a-plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10(6) cm(-2) and 10(3) cm(-1), respectively. We also fabricated and characterized a-plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density. (c) 2007 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim.