Selective epitaxial growth of GaAs/GaAlAs multiquantum-well structures

Acta Physica Hungarica（1991）

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摘要

This paper describes a new enhanced vertical rotational Liquid Phase Reactor applicable for superlattice growth. LPE grown superlattice, dislocation barrier structure and anisotropic superlattice grown in this apparatus are presented.

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关键词

superlattices,epitaxial growth,dislocations

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