A Charge-Based Low-Power High-SNR Capacitive Sensing Interface Circuit.

IEEE Trans. on Circuits and Systems(2008)

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摘要
This paper describes a low-power approach to capacitive sensing that achieves a high signal-to-noise ratio. The circuit is composed of a capacitive feedback charge amplifier and a charge adaptation circuit. Without the adaptation circuit, the charge amplifier only consumes 1 μW to achieve the audio band SNR of 69.34dB. An adaptation scheme using Fowler-Nordheim tunneling and channel hot electron injection mechanisms to stabilize the DC output voltage is demonstrated. This scheme provides a very low frequency pole at 0.2Hz. The measured noise spectrums show that this slow-time scale adaptation does not degrade the circuit performance. The DC path can also be provided by a large feedback resistance without causing extra power consumption. A charge amplifier with a MOS-bipolar pseudo-resistor feedback scheme is interfaced with a capacitive micromachined ultrasonic transducer to demonstrate the feasibility of this approach for ultrasound applications.
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channel hot electron injection,mos-bipolar pseudo-resistor feedback,capacitive feedback charge amplifier,floating-gate circuit,power 1 muw,high-snr capacitive sensing interface circuit,capacitive sensors,amplifiers,capacitive sensing circuit,charge amplifier,fowler–nordheim tunneling,mems microphone interface circuit,capacitive circuit,detector circuits,ultrasound application,fowler-nordheim tunneling,charge adaptation circuit,ultrasonic transducers,capacitive micromachined ultrasonic transducer,channel hot-electron injection,very low frequency,biomedical research,fowler nordheim tunneling,noise measurement,bioinformatics,signal to noise ratio,spectrum,voltage,tunneling,ultrasound
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