30.2: Active Matrix Electrophoretic Displays on Temporary Bonded Stainless Steel Substrates with 180 °C a-Si:H TFTs

Shawn M. O'Rourke,Sameer M. Venugopal,Gregory B. Raupp,David R. Allee,Scott Ageno,Edward J. Bawolek,Douglas E. Loy,Jann P. Kaminski,Curt Moyer,Barry O'Brien,Ke Long,Michael Marrs,Dirk Bottesch,Jeff Dailey,Jovan Trujillo,Rita Cordova,Mark Richards,Daniel Toy,Nicholas Colaneri

SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS（2008）

引用 16|浏览14

暂无评分

摘要

A low temperature, 180 degrees C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64x64 electrophoretic display with integrated column drivers are demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.7 cm(2)/V-sec, median drive currents of 26.2 mu A and low defectivity.

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要