RBS Investigation of Ion Implanted SiSiO2 Structures Irradiated with 20 MeV Electrons

The influence of high-energy electron irradiation oil the redistribution of silicon and oxygen atoms in implanted Si-SiO2 structures has been investigated by Rutherford backscattering spectroscopy (RBS). Two groups of Si-SiO2 samples implanted with different doses of silicon ions (1 x 10(12) cm(-2) and 1 x 10(16) cm(-2)) are used. The ion energy of 15 keV is chosen to produce maximum radiation defects at the Si-SiO2 interface. The structures are then irradiated with 10 MeV electrons for different durations (from 60 S Lip to 120 min). After electron irradiation, the redistribution of the oxygen and silicon atoms in the samples implanted with 1 x 10(12) cm(-2) Si+ ions is negligible: significant redistribution of these atoms is found only in Si-Sio(2) samples implanted a with dose of 10(16) cm(-2). These results demonstrate that the structural changes at the silicon Surface of implanted Si-SiO2 samples, which take place after electron irradiation, depend more strongly on the implantation dose than on the electron dose irradiation.