Characterization of Dynamic SRAM Stability in 45 nm CMOS.

IEEE Journal of Solid-State Circuits(2011)

引用 71|浏览12
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摘要
Optimization of SRAM yield using dynamic stability metrics has been evaluated in the past to ensure continued scaling of bitcell size and supply voltage in future technology nodes. Various dynamic stability metrics have been proposed but they have not been used in practical failure analysis and compared with conventional static margins. This work compares static and dynamic metrics to identify exp...
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关键词
Random access memory,Circuit stability,Stability criteria,Measurement,Arrays,Correlation
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