A novel method to dope diamond — Ion Beam Nuclear Transmutation Doping (IBNTD)

Using MeV-range protons to transmute a small fraction of host nuclei into n- or p-type dopants, we have demonstrated a novel method to dope challenging wide bandgap semiconductors. In particular, we have doped isotopically-enriched 13C diamond and AlGaN films using this method focusing on the 13C+1H→14N+γ, radiative proton capture resonance at 1.75 MeV and 27Al+1H→28Si+γ proton capture resonance at 0.997 MeV. Both samples sustained primarily end-of-range damage which was annealable in AlGaN. We have performed a variety of measurements to characterize the doped samples including Raman spectroscopy, STM, and X-ray diffraction on the doped samples which suggest the viability of IBNTD as a doping method. Calculations indicate that doping layer thicknesses of the order of 10 nm are achievable. Possible doping concentrations using this technique are also estimated.