Study on Channel Parameters of Static Induction Transistor

The electric performance of static induction transistor (SIT) is dependent strongly on the channel parameters of device. The ratio of is an essential combined channel parameter not only for I-V characteristics but also for the high-current performance of device especially for the high frequency SIT (HF SIT), which are researched in this article. The pinch factor is also a key combined channel parameter embodies the general control criterion of fabrication parameters in determining whether it is a mixed, triode-like or pentode-like I-V characteristic which are also studied in detail. A great deal of experimental results is given which are available and convenient for design and fabrication of HF SIT, particularly for mixed I-V non-saturating characteristics.