Electronic Energy Levels in High-Temperature Superconductors

H. P. Roeser, D. T. Haslam,J. S. López, M. Stepper, M. F. von Schoenermark, F. M. Huber,A. S. Nikoghosyan

Journal of Superconductivity and Novel Magnetism(2010)

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摘要
Parent materials of high-temperature superconductors (HTSC) need to be doped to become superconducting. The optimum doping for maximum critical transition temperature T c has been analyzed for more than 20 materials. Assuming a uniform doping distribution the distance x between doped unit cells—projected into the CuO 2 plane for cuprates—shows a strong linear correlation to the inverse of T c in the form (2 x ) 2 = m 1 1/ T c with a slope of m 1 =(2.786±0.029)×10 −15 m 2 K. The mercury cuprate homologous series HgBa 2 Ca n −1 Cu n O 2 n +2+ δ with n =1,2,3 has been used to demonstrate the procedure deriving the doping distance x from the optimum doping value δ .
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关键词
High-temperature superconductor,Superconductor crystal structure,Superconducting current channel,Superconducting unit area
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