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AlGaN‐based 330 Nm Resonant‐cavity‐enhanced P–i–n Junction Ultraviolet Photodetectors Using AlN/AlGaN Distributed Bragg Reflectors

Zili Xie,Bin Liu,Chao Nie, Ruolian Jiang,Xiaoli Ji,Hong Zhao,Ping Han,Xiangqian Xiu,Rong Zhang,Youdou Zheng,Haimei Gong

Physica status solidi C, Conferences and critical reviews/Physica status solidi C, Current topics in solid state physics（2010）

Cited 6|Views12
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Key words
AlGaN,MOCVD,resonant-cavity-enhanced photodetectors,reflectors,optical properties
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