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FMR studies in the TbFeCo/GdFeCoSi bilayers

Solid State Communications(2005)

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摘要
Bilayers, TbFeCo/GdFeCoSi, made by sputtering on glass substrate with buffer and capping layers were studied by measuring the hysteresis loop and by ferromagnetic resonance (FMR). When the field H was applied along the film normal, a double HC hysteresis loop related to the two sublayers was observed. In ferromagnetic resonance measurements, a peculiar out-of-plane angular dependence of FMR spectrum was obtained. When scanning field H was 0–637kA/m less than the anisotropy field of TbFeCo sublayer, two FMR peaks were observed. One peak was characteristic of uniaxial and unidirectional anisotropy. The anisotropy constants were obtained by fitting the data with the theory of FMR, and this peak was considered to be related to the low anisotropy GdFeCoSi layer. The second peak appeared only when the dc field H was orientated in a limited angular range around 180°. This peak was considered to be related to an uncoupled interfacial GdFeCoSi sublayer near Al capping layer. However, when H was scanned between 0–1114kA/m, only one peak is observed due to magnetization reversal of TbFeCo layer with uniaxial anisotropy.
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76.50.+g,75.30.Et
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