Nature of traps responsible for failure of MOS devices
msra(2000)
摘要
A failure of chips in a huge amount of modern electronic devices is connected
as a rule with the undesirable capturing of charge (electrons and holes) by
traps in a thin insulating film of silicon oxide in transistors. It leads to a
breakdown of transistors or to a destructive change of their characteristics.
It is suggested that silicon oxide will be replaced in the next generation of
nanoscale devices by silicon oxynitride. Therefore, it is very important to
understand the nature of traps in this material. We discuss this nature using
the quantum-chemical simulation.
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关键词
chip
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