White light generation from In-rich InAlGaN/InGaN heterostructures

A strong room temperature green-to-red photoluminescence (PL) emission has been obtained from an In-rich InAlGaN quaternary layer grown on a GaN template using metal organic chemical vapor deposition. The PL decay kinetics could be described by a stretched exponential with the stretching parameter beta = 0.40 +/- 0.02. The decay time increased with wavelength while beta was constant, which indicates significant disorder in the material related to spatial fluctuation of local In concentration. By the addition of blue emission via the insertion of an InGaN layer, a white light emission has been demonstrated from In-rich InAlGaN/InGaN heterostructures.