Some doping results in ZnSe grown by molecular beam epitaxy

Comparison studies of N-doping of ZnSe for (100) and (311)A orientations have been performed. The C-V measurements indicated that the doping level of the samples grown on (311)A is higher than that of the samples on (100). Doping experiments using Zn3As2 as As-doping source evaporated by a Knudsen effusion cell also have been performed. Low-temperature photoluminescence measurements revealed evidence of shallow acceptor bound excitons, indicating that some of the As is being incorporated as shallow levels. It is also pointed out that group V monomers such as As and P are promising p-type dopants.