ZnSe/Zn0.8Cd0.2Se Quantum Well LEDs and Lasers
Journal of crystal growth(1992)
摘要
CdS was grown on BaF2 and SrF2 by hot wall epitaxy and on BaF2 by pulsed laser evaporation. Reflection measurements on the epitaxial layers showed energy shifts of A- and B-excitons. The shift on the surface of the film is different from that on the interface side. Calculations of the shift using known data of the deformation potentials confirmed the experimental results. We give here an explanation of these results taking into account thermal strain on the surface side and additional mismatch strain on the interface side.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要