An investigation of proton energy effects in SiGe HBT technology

Shiming Zhang,J. D. Cressler,S. Subbanna,R. Groves,Guofu Niu,T. Isaacs-Smith,J. R. Williams, H. Bakhru,P. W. Marshall,H. S. Kim,R. A. Reed

Nuclear Science, IEEE Transactions （2002）

引用 12|浏览29

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摘要

We present the first investigation of low energy (1.75 MeV) proton irradiation in SiGe HBT's and discuss proton energy effects in SiGe HBT technology. The results show that after 1.75 MeV 1 × 1014 p/cm2, a semi-insulating substrate is obtained and the peak quality factor of the monolithic inductors is improved by about 18% at 1.6 GHz. Although large current gain degradation for the SiGe HBT's was observed in the RF bias region after 1 × 1014 p/cm2, the degradation in peak fT is only about 11%. Proton energy studies from 1.75 MeV to 200 MeV in SiGe HBT's suggest that the conventional damage factor can be used to estimate energy-dependent proton-induced radiation damage in this technology.

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关键词

forward Gummel characteristics,semi-insulating substrate,low energy proton irradiation,peak quality factor,peak threshold frequency degradation,semiconductor device measurement,SiGe,semiconductor materials,damage factor,proton effects,1.75 to 200 MeV,microwave bipolar transistors,proton energy effects,heterojunction bipolar transistors,energy-dependent proton-induced radiation damage,SiGe HBT technology,monolithic inductors,reciprocal current gain,cutoff frequency,Ge-Si alloys,RF bias region,current gain degradation,1.6 GHz

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