Performance and Area Scaling Benefits of FD-SOI Technology for 6-T SRAM Cells at the 22-nm Node

The performance and threshold voltage variability of fully depleted silicon-on-insulator (FD-SOI) MOSFETs are compared against those of conventional bulk MOSFETs via 3-D device simulation with atomistic doping profiles. Compact (analytical) modeling is then used to estimate six-transistor SRAM cell performance metrics (i.e., read and write margins, and read current) at the 22 nm CMOS technology no...