A Pn Junction-Current Model For Advanced Mosfet Technologies

Ryosuke Inagaki,Norio Sadachika,Mitiko Miura-mattausch,Yasuaki Inoue

IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES（2009）

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摘要

A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potential-based MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

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关键词

HiSIM, PN junction current, diode current, surface potential

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