Increase in the density of β-FeSi₂ nanoclusters on a Si(111) surface by means of Si(111) √3 × √3R30°-B reconstruction

The formation of iron disilicide (beta-FeSi2) nanoclusters as a result of solid-state epitaxy at T = 500-700 degrees C and an iron coverage of 0.05 - 0.5 monolayer on a boron-modified Si( 111) x R 30 surface has been studied by scanning tunneling microscopy. It is established that the number density of beta-FeSi2 nanoclusters on the Si(111)root 3 x root 3 R30 degrees - B surface significantly exceeds the density of silicide clusters formed on the atomically clean Si( 111) surface with a 7 x 7 reconstruction for the analogous iron coverages and annealing temperatures. At the same time, the density of point defects and clusters possessing metallic conductivity on the Si( 111)root 3 x root 3 R30 degrees - B surface is several orders of magnitude lower than on the Si( 111) 7 x 7 surface treated under identical conditions.