Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora^®LK HM

Aurora(R) LK HM (k = 3.2) material has been successfully integrated into 30 nm half pitch structures. This material outperforms Aurora(R) LK (k = 3.0) in terms of breakdown field strength and mechanical properties. Scaling of the physical vapor deposition (PVD) based barrier/seed process and adjusting of the barrier chemical mechanical polishing (CMP) overpolish condition were yield enabling factors. No degradation of the breakdown field upon reducing half pitch is observed down to 30 nm for line lengths up to at least 1 mm. The median time-dependent dielectric breakdown (TDDB) lifetime, as evaluated on a 1 mm 35 nm half pitch parallel line structure, exceeds 10 years at an electrical field of 2.6 MV/cm. (C) 2010 The Japan Society of Applied Physics