Current status and future trends of SiGe BiCMOS technology

D. L. Harame,D. C. Ahlgren,D. D. Coolbaugh,J. S. Dunn,G. G. Freeman,J. D. Gillis,R. A. Groves, G. n. Henderse, R. A. Johnson,A. J. Joseph,S. Subbanna, A. M. Victor, K. M. Watson,C. S. Webster,P. J. Zampardi

IEEE Transactions on Electron Devices（2001）

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摘要

The silicon germanium (SiGe) heterojunction bipolar transistor (HBT) marketplace covers a wide range of products and product requirements, particularly when combined with CMOS in a BiCMOS technology. A new base integration approach is presented which decouples the structural and thermal features of the HBT from the CMOS. The trend is to use this approach for future SiGe technologies for easier mig...

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BiCMOS integrated circuits

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