A 6-b 4.1-GS/s Flash ADC With Time-Domain Latch Interpolation in 90-nm CMOS

J. Solid-State Circuits(2013)

引用 74|浏览26
暂无评分
摘要
A 6-b 4.1-GS/s flash ADC was fabricated using a 90-nm CMOS with a time-domain latch interpolation technique that reduces the number of front-end dynamic comparators by half. The reduced number of comparators lowers power consumption, load capacitance to the T/H circuit, and the overhead of comparator calibration. The measured peak INL and DNL after comparator calibration are 0.74 and 0.49 LSB, respectively. The measured SNDR and SFDR are 31.2 and 38.3 dB, respectively, with a 2.02-GHz input at 4.1-GS/s operation while consuming 76 mW of total power. This ADC achieves a figure of merit of 0.625 pJ/conversion-step at 4.1 GS/s.
更多
查看译文
关键词
cmos integrated circuits,high-speed comparator,time-domain latch interpolation,front-end dynamic comparators,power consumption,frequency 2.02 ghz,analogue-digital conversion,interpolation,sndr,offset calibration,inl,dnl,flash adc,sfdr,t-h circuit,comparator calibration,gain 31.2 db to 38.3 db,time-domain analysis,load capacitance,power con- sumption,size 90 nm,comparators (circuits),time-domain latch interpolation technique,cmos,flash memories,calibration,noise
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要