Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser.

OPTICS EXPRESS(2008)

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摘要
We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 mu m evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of similar to 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device. (c) 2008 Optical Society of America.
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optoelectronics,semiconductor lasers
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