CuAu-Type Ordering Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate

(GaP)(n)(InP)(n) short-period superlattices (SLs) grown on a GaAs (011) substrate by gas-source molecular beam epitaxy (MBE) are studied by transmission electron microscopy (TEM) . The satellite spots which indicate the formation of a GaP/InP monolayer superlattice in the [100] direction (CuAu-type ordering) are clearly observed, for the first time,, in the (011) transmission electron diffraction (TED) pattern. The (011) plan-view TEM image shows composition modulation along the [100] direction and the self-formation of a straight wire structure with a length of ol rr 1 mu m in the [01(1) over bar] direction.