Status of Large Diameter SiC Single Crystals at II-VI

II-VI is developing large-diameter SiC crystals to be used as lattice-matched, high thermal conductivity substrates for new generation GaN-based and SiC-based semiconductor devices. Large-diameter 6H SiC single crystals are grown at II-VI using our Advanced PVT sublimation growth process. Stable SI properties are achieved by compensation with vanadium, which results in high and spatially uniform resistivity, on the order of 10(11) Ohm-cm. The quality of the presently grown 100 min 6H SI substrates has been dramatically improved [1], and they are free of edge defects. Micropipe density in the 100 min 6H SI substrates ranges from 2 to 8 cm(-2) and dislocation density from 3.10(4) to 6.10(4) cm(-2). X-ray rocking curves measured on as-sawn 100 mm 6H wafers showed edge-to-edge lattice curvature (Delta Omega) between 0.1 degrees and 0.3 degrees and FWHM of the rocking curve between 50 and 100 arc-seconds.