Relaxation And Recombination Of Photoexcited Carriers In A-Si-H Calculated By Monte-Carlo Simulations

The relaxation and recombination of photoexcited carriers in a-Si: H is simulated by means of Monte-Carlo calculations taking into account radiative and nonradiative recombination processes. The results are in good agreement with experimental data. The measured maximum in the luminescence quantum efficiency at a temperature of T almost-equal-to 50 K can be quantitatively explained by nonradiative Auger recombination. The minimum in the negative decay exponent at T almost-equal-to 30 K obtained in long-time luminescence decay experiments is explained by a shift of the peak position of the lifetime spectrum of the nonradiatively recombining carriers to longer times.