A novel double heterostructure: The GaAs/GaPAsSb system

A new semiconductor, the pseudo-ternary GaPAsSb, has been prepared in epitaxial layer form. This quaternary can be lattice matched both to GaAs and to InP. A liquid phase epitaxial method is described to grow double hetero-epitaxial systems made from GaAs and GaPAsSb. The lattice matching has been studied using X-ray rocking curve and X-ray topography techniques. The composition and phase diagram data were also studied using different growth temperatures. In the system nearly perfect lattice matching was achieved. Luminescence measurements showed that the system can substitute for the GaAs/GaAlAs double heteroepitaxial systems conventionally used for laser diodes.