Characteristics of a high-speed passively mode-locked surface-emitting semiconductor InGaAs laser diode
IEEE Photonics Technology Letters(2005)
摘要
We have studied the performance of the recently demonstrated high-speed passively mode-locked 980-nm vertical cavity diode lasers (pulsewidth down to /spl tau//sub p//spl sim/15 ps, repetition rate up to 15 GHz) by investigating the dynamics of the saturable p-i-n multiple quantum well InGaAs absorber. The impact of the absorber on the noise characteristics of these new compact short pulse sources...
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关键词
Surface emitting lasers,Indium gallium arsenide,Diode lasers,PIN photodiodes,P-i-n diodes,Vertical cavity surface emitting lasers,Optical pulses,Optical surface waves,Optical noise,Laser mode locking
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