Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers

AlxGayIn1-x-ySb heterostructures suitable for laser applications have been grown on GaAs substrates. The structures have been analysed using X-ray diffraction and photoluminescence. Laser diodes have been fabricated by wet etching 20 mu m wide bars and cleaving into either 1 min or 2mm lengths. The electroluminescence of these bars has been investigated over a range of temperatures.