Deposition of Photocatalytic Tio2 and N-Doped Tio2 Films by Arc Ion Plating

TiO2 and N-doped TiO2 films were deposited on the glass substrates by arc ion plating method. The results show that the deposition rate does not change with the increasing deposition time. The increase of mass flow rate of N-2 gives rise to the increase of deposition rate. All as-deposited TiO2 and N-doped TiO2 films are amorphous. The anatase TiO2 phase with preferred orientation (101) is acquired by post-annealing at 400 degrees C for 2 h. The incorporation of N into the TiO2 films and the heat treatment extensively shift the band edge to the visible light region.