Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation

The transition from electronic to nuclear stopping power mechanisms for < 10 keV B in Si has resulted in a new class of damage accumulation effects, Strong correlations are seen between beam current, wafer temperature during implant, anneal conditions and the damage accumulation, diffusion and activation for low-energy B implants, In response to these challenges, new characterization methods and processes are being explored; such as the use of multi-species implantation and depth profiling of damage distributions with photo-acoustic probes.